Search results for "Rapid thermal annealing"

showing 3 items of 3 documents

Quantum well intermixing in GaInNAs/GaAs structures

2003

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. …

:Science::Physics::Optics and light [DRNTU]Materials sciencePhotoluminescencebusiness.industryAlloyGeneral Physics and Astronomyengineering.materialSettore ING-INF/01 - ElettronicaBlueshiftGallium arsenidechemistry.chemical_compoundchemistrySputteringQuantum well intermixing GaInNAsengineeringOptoelectronicsRapid thermal annealingbusinessSaturation (magnetic)Quantum well
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Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors

2004

We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…

:Science::Physics::Optics and light [DRNTU]PhotoluminescenceMaterials scienceCondensed Matter::Otherbusiness.industrychemical beamPhysics::OpticsGeneral Physics and AstronomyNonlinear opticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectDistributed Bragg reflectorBlueshiftGallium arsenideCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistryOptoelectronicsSemiconducting galliumRapid thermal annealingbusinessSemiconductor quantum wellsRefractive indexQuantum wellJournal of Applied Physics
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The effect of annealing temperature and time on synthesis of graphene thin films by rapid thermal annealing

2015

In this paper, we performed synthesis of graphene thin films by rapid thermal annealing (RTA) of thin nickel copper (Ni/Cu) layers deposited on spectroscopic graphite as a carbon source. Furthermore, we investigated the effect of annealing temperature and annealing time on formation and quality of synthesized graphene films. Raman spectroscopy study showed that annealing at lower temperatures results in formation of monolayer graphene films, while annealing at higher temperatures results in formation of multilayer graphene films. We used Raman mapping to determine the distribution of graphene sheets. Surface morphology of graphene thin films was investigated by atomic force microscopy and s…

Materials scienceThin films.Annealing (metallurgy)Scanning electron microscopeThin filmsvirusesAnalytical chemistry02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionsymbols.namesakelawMaterials ChemistryGraphiteThin filmGraphene; Graphite; Rapid thermal annealing; Thin films.Graphene oxide paperRapid thermal annealingGrapheneMechanical EngineeringMetals and Alloys021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesElectronic Optical and Magnetic MaterialsChemical engineeringMechanics of MaterialssymbolsGraphiteGraphene0210 nano-technologyRaman spectroscopyGraphene nanoribbonsSynthetic Metals
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